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FESB16JT-E3/81

FESB16JT-E3/81

DIODE GEN PURP 600V 16A TO263AB

FESB16JT-E3/81

FESB16JT-E3/81

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Part No :

FESB16JT-E3/81

Manufacturer
Vishay General Semiconductor – Diodes Division
Description
DIODE GEN PURP 600V 16A TO263AB
Catalog
Diodes - Rectifiers - Single
Availability
354435 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FESB16JT-E3/81 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):16A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 16 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:145pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
Operating Temperature - Junction:-65°C ~ 150°C
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