DIODE GEN PURP 2.5A 200V R3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 2.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 2.5 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R-3, Axial |
Supplier Device Package: | R-3 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4148W-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 150MA SOD123 |
|
MBRB1635HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 16A TO263AB |
|
MBRD330T4Rochester Electronics |
DEVELOPMENT KITS/ACCESSORIES |
|
S5J R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 5A DO214AB |
|
BAS40T-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 200MA SOT523 |
|
S12KC M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 12A DO214AB |
|
SRAS20100HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 20A TO263AB |
|
DZ950N44KS01HPSA1IR (Infineon Technologies) |
THYR / DIODE MODULE DK |
|
UFS370J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 700V 3A DO214AB |
|
VS-SD200N24PCVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.4KV 200A DO205 |
|
SBX2040-3GDiotec Semiconductor |
SCHOTTKY D5.4X7.5_LOWRTH 40V 20A |
|
VS-8EWS12SLHM3Vishay General Semiconductor – Diodes Division |
DIODES - D-PAK-E3 |
|
MUR440HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO201AD |