DIODE GEN PURP 200V 5A TO220F-2L
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 920 mV @ 5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 100 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | TO-220F-2L |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RBR3LAM40ATRROHM Semiconductor |
DIODE SCHOTTKY 40V 3A PMDTM |
|
1N3070Rochester Electronics |
RECTIFIER DIODE |
|
US1KDiotec Semiconductor |
DIODE UFR SMA 800V 1A |
|
R5000815XXWAPowerex, Inc. |
RECTIFIER STUD MOUNT FORWARD DO- |
|
CUHS15F40,H3FToshiba Electronic Devices and Storage Corporation |
SMALL-SIGNAL SCHOTTKY BARRIER DI |
|
BYC5-600P127Rochester Electronics |
HYPERFAST RECTIFIER DIODE TO 22 |
|
RB078BM30SFHTLROHM Semiconductor |
RB078BM30SFH IS LOW SUB AND HIGH |
|
ESGLW RQGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
|
VS-12F120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 12A DO203AA |
|
SF21GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 2A DO204AC |
|
BAS285-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD80 |
|
VS-6FL40S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 6A DO203AA |
|
AR4PM-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.8A TO277 |