DIODE AVALANCHE 600V 3A SOD64
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 100 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | SOD-64, Axial |
Supplier Device Package: | SOD-64 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
V25PL60-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 5.5A TO277A |
|
HS3BB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AA |
|
CDBF0140L-HFComchip Technology |
DIODE SCHOTTKY 40V 100MA 1005 |
|
1N4454 TR PBFREECentral Semiconductor |
DIODE GEN PURP 75V 150MA DO35 |
|
STTH2R06USTMicroelectronics |
DIODE GEN PURP 600V 2A SMB |
|
SE30AFG-M3/6BVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1.4A DO221AC |
|
NTE6031NTE Electronics, Inc. |
R-300 PRV 60A ANODE CASE |
|
NTE177NTE Electronics, Inc. |
D-SI-GEN PURP DET 200 PRV |
|
CD214B-R3800J.W. Miller / Bourns |
DIODE GEN PURP 800V 3A SMB |
|
ES2BAHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AC |
|
EGL34G/51Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
|
SDUR1540SMC Diode Solutions |
DIODE GEN PURP 400V 15A TO220AC |
|
MBRB1635HE3_A/PVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 16A TO263AB |