CAP ALUM 12000UF 20% 6.3V RADIAL
DIODE GEN PURP 8000V 350MA HVM
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 8000 V |
Current - Average Rectified (Io): | 350mA |
Voltage - Forward (Vf) (Max) @ If: | 14 V @ 350 mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 8000 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | HVM |
Operating Temperature - Junction: | -20°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JAN1N4245Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
MUR2510RGeneSiC Semiconductor |
DIODE GEN PURP REV 100V 25A DO4 |
|
MBR830MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 8A 5DFN |
|
LS101C-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
|
SF32G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO201AD |
|
DZ950N44KHPSA1IR (Infineon Technologies) |
DIODE GEN PURP 4.4KV 950A MODULE |
|
US1J M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AC |
|
FESB8HTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 8A TO263AB |
|
SDT08S60Rochester Electronics |
RECTIFIER DIODE |
|
PMEG3002AEL,315Nexperia |
DIODE SCHOT 30V 200MA DFN1006-2 |
|
SD1206T020S1R0Elco (AVX) |
DIODE SCHOTTKY 20V 1A 1206 |
|
DSTF30100SWickmann / Littelfuse |
DIODE SCHOTTKY 30A 100V ITO220AB |
|
SK320AHR3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 3A DO214AC |