DIODE GEN PURP 125V 200MA DO35
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 125 V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 30 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 3 nA @ 60 V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NRVUS240VT3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 2A SMB |
|
SK56-3GDiotec Semiconductor |
SCHOTTKY SMB 60V 5A |
|
DB2L33500LROHM Semiconductor |
DIODE SCHOTTKY 30V 100MA 0201 |
|
HER307G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO201AD |
|
D1G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 1A T1 |
|
MUR160HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AC |
|
SK32B M4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 3A DO214AA |
|
V10PM12HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 3.9A TO277A |
|
V2P6-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 2A MICROSMP |
|
STF20100SMC Diode Solutions |
DIODE SCHOTTKY 100V ITO220AC |
|
TSSE3H60 RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A SOD123HE |
|
FR203G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO204AC |
|
D650N06TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 650A |