Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 60A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.75 V @ 50 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 200 µA @ 650 V |
Capacitance @ Vr, F: | 2530pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ES1LJ R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AC |
|
FESF16GTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 16A ITO220AC |
|
RGL41G/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
SB5200Diotec Semiconductor |
SCHOTTKY DO-201 200V 5A |
|
A170MPowerex, Inc. |
DIODE GEN PURP 600V 100A DO205AA |
|
PMEG2005EGWXNexperia |
DIODE SCHOTTKY 20V 500MA SOD123 |
|
SS215LHRVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 2A SUB SMA |
|
FR307GP-TPMicro Commercial Components (MCC) |
DIODE GP 1KV 3A DO201AD |
|
VS-SD1700C24KVishay General Semiconductor – Diodes Division |
DIODE GP 2.4KV 2080A DO200AC |
|
BAS16-02VE6327Rochester Electronics |
RECTIFIER DIODE, 85V |
|
JANTX1N6622Roving Networks / Microchip Technology |
DIODE GEN PURP 660V 2A AXIAL |
|
BAT400D-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 500MA SOT23-3 |
|
BAT54-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |