DIODE SCHOTTKY 650V 8A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 8 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 230 µA @ 650 V |
Capacitance @ Vr, F: | 260pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
LS412060Powerex, Inc. |
DIODE GEN PURP 2KV 600A POWRBLOK |
|
HS1GL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |
|
RS1DFS MWGTSC (Taiwan Semiconductor) |
DIODE |
|
SM4005PL-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A SOD123FL |
|
RS1KHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO214AC |
|
SSL510B-F1-0000HF |
DIODE SCHOTTKY 100V 5A DO214AA |
|
EGL41F-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 1A DO213AB |
|
1N5617C.TRSemtech |
DIODE GEN PURP 400V 2A AXIAL |
|
HER158G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1.5A DO204AC |
|
UPR5/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 2.5A DO216 |
|
VS-80EBU04HF4Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 80A POWERTAB |
|
SK52BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 5A DO214AA |
|
RHRU150100Rochester Electronics |
150A, 1000V HYPERFAST DIODE |