Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
Diode Type: | - |
Voltage - DC Reverse (Vr) (Max): | - |
Current - Average Rectified (Io): | - |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | - |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DSS20-0015BWickmann / Littelfuse |
DIODE SCHOTTKY 15V 20A TO220AC |
|
SK24A R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 2A DO214AC |
|
SRAS2040 RNGTSC (Taiwan Semiconductor) |
20A, 20V - 150V SURFACE MOUNT SC |
|
CURC305-GComchip Technology |
DIODE GEN PURP 600V 3A DO214AB |
|
MUR105S M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO214AA |
|
SKL32Diotec Semiconductor |
SCHOTTKY SOD-123FL 20V 3A |
|
BYG10J-M3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A |
|
JANTX1N6625Roving Networks / Microchip Technology |
DIODE GEN PURP 1.1KV 1A AXIAL |
|
1N6482-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
|
CDBC5150-HFComchip Technology |
DIODE SCHOTTKY 150V 5A DO214AB |
|
BAS16-HFComchip Technology |
DIODE SWITCHING SINGLE 100V 150M |
|
US1JE-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A SMAE |
|
SS33-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 3A DO214AB |