Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 8A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.75 V @ 6 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 200 µA @ 650 V |
Capacitance @ Vr, F: | 365pF @ 1V, 100kHz |
Mounting Type: | Surface Mount |
Package / Case: | 4-PowerTSFN |
Supplier Device Package: | 4-PQFN (8x8) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SS3P4HM3J/84AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 40V DO-220AA |
![]() |
120NQ035-1SMC Diode Solutions |
DIODE SCHOTTKY 35V 120A PRM1-1 |
![]() |
DSB1A20Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 1A DO204AL |
![]() |
MBR160RLGSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 1A AXIAL |
![]() |
1N1200AGeneSiC Semiconductor |
DIODE GEN PURP 100V 12A DO4 |
![]() |
VS-SD1500C25LVishay General Semiconductor – Diodes Division |
DIODE GP 2.5KV 1600A DO200AB |
![]() |
MPG06JHE3_A/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
![]() |
ESGLW RVGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
![]() |
STPSC20065DSTMicroelectronics |
DIODE SCHOTTKY 650V 20A TO220AC |
![]() |
VS-3EJH02-M3/6BVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO221AC |
![]() |
BAV21,133Nexperia |
DIODE GEN PURP 200V 250MA ALF2 |
![]() |
MSC030SDA120KRoving Networks / Microchip Technology |
UNRLS, FG, GEN2, SIC SBD, TO-220 |
![]() |
MMBD4448WT-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 75V 250MA SOT323 |