DIODE GEN PURP 100V 200MA DO35
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 10 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 4 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 75 V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RGF1G-E3/67AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO214BA |
|
SS24-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 2A DO214AC |
|
SS220-F1-0000HF |
DIODE SCHOTTKY 200V 2A DO214AA |
|
NSVR0320XV6T1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 23V 1A SOT563 |
|
HS2F M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 2A DO214AA |
|
U3C-E3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AB |
|
SS25HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 2A DO214AA |
|
SD101AW-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 400MW 60V SOD123 |
|
HER508G-D1-0000 |
DIODE GEN PURP 1000V 5A DO201AD |
|
UGB8HTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 8A TO263AB |
|
S3KHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 3A DO214AB |
|
SS18-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 80V 1A DO214AC |
|
JAN1N4942Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |