DIODE GEN PURP 880V 1.4A
RF ANT 836MHZ DOME NMO BASE MT
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/590 |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 880 V |
Current - Average Rectified (Io): | 1.4A |
Voltage - Forward (Vf) (Max) @ If: | 1.4 V @ 1.4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 2 µA @ 880 V |
Capacitance @ Vr, F: | 40pF @ 10V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | E, Axial |
Supplier Device Package: | - |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RF01VM2STE-17ROHM Semiconductor |
DIODE GEN PURP 250V 100MA UMD2 |
|
STTH1210DSTMicroelectronics |
DIODE GEN PURP 1KV 12A TO220AC |
|
SL1M-AQ-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
NRVS3KBSanyo Semiconductor/ON Semiconductor |
SR SMB GPPN 3A 800V |
|
EGF1T-E3/67AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.3KV 1A DO214BA |
|
S1DALHM3GTSC (Taiwan Semiconductor) |
1A, 200V, STANDARD RECOVERY RECT |
|
US2ADiotec Semiconductor |
DIODE UFR SMB 50V 2A |
|
S3MHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO214AB |
|
VS-MURB820-1-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO262AA |
|
VS-72HF120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 70A DO203AB |
|
MBRB1535CTTRSMC Diode Solutions |
15A, 35V, D2PAK, SCHOTTKY RECTIF |
|
SKL14-AQDiotec Semiconductor |
SCHOTTKY SOD-123FL 40V 1A |
|
WND08P16XQWeEn Semiconductors Co., Ltd |
STANDARD POWER DIODE |