DIODE GEN PURP 200V 8A TO263AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 975 mV @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S10JC V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 10A DO214AB |
|
RSFDL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 500MA SUBSMA |
|
SJPB-D6VRSanken Electric Co., Ltd. |
DIODE SCHOTTKY 60V 1A SJP |
|
AU2PMHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1KV 1.3A TO277A |
|
BYM12-400-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
RS2KFS M3GTSC (Taiwan Semiconductor) |
500NS, 2A, 800V, FAST RECOVERY R |
|
BYC8DX-600,127Rochester Electronics |
NOW WEEN - BYC8DX-600 - HYPERFAS |
|
MBR130T1GRochester Electronics |
SCHOTTKY POWER RECTIFIER, SURFAC |
|
BYT52D-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.4A SOD57 |
|
NTE5921NTE Electronics, Inc. |
R-400PRV 20A ANODE CASE |
|
BYV415K-600PQ127Rochester Electronics |
ULTRAFAST RECTIFIER DIODE |
|
MBRB760-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO263AB |
|
ES15DLWHRQGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |