SCHOTTKY BARRIER DIODE (AEC-Q101
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 550 mV @ 700 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 7.4 ns |
Current - Reverse Leakage @ Vr: | 50 µA @ 40 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2M |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
LXA15T600Power Integrations |
DIODE GEN PURP 600V 15A TO220AC |
|
S2GFS M3GTSC (Taiwan Semiconductor) |
2A, 400V, STANDARD RECOVERY RECT |
|
GIB1404HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
S10JC V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 10A DO214AB |
|
RSFDL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 500MA SUBSMA |
|
SJPB-D6VRSanken Electric Co., Ltd. |
DIODE SCHOTTKY 60V 1A SJP |
|
AU2PMHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1KV 1.3A TO277A |
|
BYM12-400-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
RS2KFS M3GTSC (Taiwan Semiconductor) |
500NS, 2A, 800V, FAST RECOVERY R |
|
BYC8DX-600,127Rochester Electronics |
NOW WEEN - BYC8DX-600 - HYPERFAS |
|
MBR130T1GRochester Electronics |
SCHOTTKY POWER RECTIFIER, SURFAC |
|
BYT52D-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.4A SOD57 |
|
NTE5921NTE Electronics, Inc. |
R-400PRV 20A ANODE CASE |