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SE10FJ-M3/I

SE10FJ-M3/I

DIODE GEN PURP 600V 1A DO219AB

SE10FJ-M3/I

SE10FJ-M3/I

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Part No :

SE10FJ-M3/I

Manufacturer
Vishay General Semiconductor – Diodes Division
Description
DIODE GEN PURP 600V 1A DO219AB
Catalog
Diodes - Rectifiers - Single
Availability
468746 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
SE10FJ-M3/I PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):780 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:7.5pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-219AB
Supplier Device Package:DO-219AB (SMF)
Operating Temperature - Junction:-55°C ~ 175°C
SE10FJ-M3/I is available at GangBo-ic.com, Please review product page below for detailed information, including SE10FJ-M3/I price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SE10FJ-M3/I to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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