CAP CER RAD 39NF 100V C0G 5%
SPEAKR 32OHM 20MW TOP PORT 103DB
DIODE SCHOTTKY 60V 10A TO220AC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 730 mV @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 20 µA @ 60 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N5550Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 3A AXIAL |
|
UF4005 TRCentral Semiconductor |
DIODE GEN PURP 600V 1A DO41 |
|
SF1604G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 16A TO220AB |
|
B150-E3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 1A DO214AC |
|
MBR10100ULPS-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 100V 10A TO277B |
|
SBR130SV-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 30V 1A SOT563 |
|
BAT43STMicroelectronics |
DIODE SCHOTTKY 30V 200MA DO35 |
|
VS-6TQ035S-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 6A TO263AB |
|
NTE5882NTE Electronics, Inc. |
R-600PRV 12A CATH CASE |
|
S3M-M3/57TVishay General Semiconductor – Diodes Division |
DIODE GPP 3A 1000V DO-214AB |
|
RS1DL RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 800MA SUBSMA |
|
S1GHM3_A/IVishay General Semiconductor – Diodes Division |
1A 400V SMA STD GPP SM RECT |
|
SS320LW RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 3A SOD123W |