CAP CER 0.018UF 100V X7R 1206
FIXED IND 3.9NH 300MA 250 MOHM
DIODE SCHOTTKY 100V 10A 5DFN
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 720 mV @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 50 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
D3041N65TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 6.5KV 4090A |
|
GL41M-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
|
SS34 R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 40V 3A DO214AB |
|
SK36AHR3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A DO214AC |
|
MBRM130LT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 1A POWERMITE |
|
SSL34 R7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 3A DO214AB |
|
SD103AWS-G3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 350MA 40V SOD323 |
|
1N4006GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 1A AXIAL |
|
SE07PJ-M3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 700MA DO220 |
|
ES1C-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 150V 1A SMA |
|
STPSC10H065B-TRSTMicroelectronics |
DIODE SCHOTTKY 650V 10A DPAK |
|
MUR305S V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
|
SF22G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |