DIODE SCHOTTKY 650V 8A TO-220-2
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 8A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.55 V @ 8 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 160 µA @ 600 V |
Capacitance @ Vr, F: | 291pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CMR5U-02 TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 200V 5A SMC |
|
STPSC10H12B2-TRSTMicroelectronics |
1200V, 10A, SILICON CARBIDE POWE |
|
V35PWM12HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 35A SLIMDPAK |
|
RBS3LAM40ATRROHM Semiconductor |
RBS3LAM40A IS SUPER LOW VF< |
|
VS-150KSR20Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 150A B42 |
|
MURF550PFGRochester Electronics |
RECTIFIER DIODE |
|
VS-MBRB1045HM3Vishay General Semiconductor – Diodes Division |
SCHOTTKY - D2PAK |
|
BAV100-GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 250MA SOD80 |
|
ES3CHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 3A DO214AB |
|
FFPF08S60STTUSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F-2L |
|
MBR1090GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 90V 10A TO220-2 |
|
RB521S-30DP-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 100MA 0201 |
|
FESF8BT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |