DIODE GEN PURP 50V 6A DO201AD
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 975 mV @ 6 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 50 V |
Capacitance @ Vr, F: | 100pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SBR8E45P5-13Zetex Semiconductors (Diodes Inc.) |
DIODE RECT SBR 45V 5A POWERDI5 |
|
UFS520J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 5A DO214AB |
|
SS36L RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A SUB SMA |
|
NRVUS110VT3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 2A SMB |
|
RUR3090Rochester Electronics |
RECTIFIER DIODE, 30A, 900V |
|
1N5401T/REIC Semiconductor, Inc. |
STD 3A, CASE TYPE: DO-201AD |
|
VS-50WQ10FNTRHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 5.5A DPAK |
|
HS2B M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AA |
|
VS-E4PH3006LHN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO247AD |
|
RB510SM-30T2RROHM Semiconductor |
RB510SM-30 IS LOW VF HIGH RELIAB |
|
STTH2R06STMicroelectronics |
DIODE GEN PURP 600V 2A DO41 |
|
S3BTRSMC Diode Solutions |
DIODE GEN PURP 100V 3A SMC |
|
EGP10C-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO204AL |