DIODE GEN PURP 600V 2A SJP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.5 V @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 50 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, J-Lead |
Supplier Device Package: | SJP |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
C3D06060G-TRWolfspeed - a Cree company |
DIODE SCHOTTKY 600V 6A TO263-2 |
|
NRVTS12100MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 12A 5DFN |
|
D2601N85TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 8.5KV 3040A |
|
RS3AHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
|
FERD20H100SHSTMicroelectronics |
DIODE RECT 100V 20A IPAK |
|
VS-SD703C12S30LVishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 790A DO200AB |
|
APT60D100SGRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 60A D3 |
|
S1KB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 800V 1A SMB |
|
SICRF5650SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
|
R5010415XXWAPowerex, Inc. |
RECTIFIER STUD MOUNT REVERSE DO- |
|
SS34 V6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 3A 40V DO-214AB |
|
GL41K-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
|
TST40L200CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 20A TO220AB |