DIODE GPP 600V 6A R-6
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 6 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 250 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 420 V |
Capacitance @ Vr, F: | 150pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R6, Axial |
Supplier Device Package: | R-6 |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FES16JTRochester Electronics |
RECTIFIER DIODE |
|
1N6643USRoving Networks / Microchip Technology |
DIODE GEN PURP 50V 300MA D5B |
|
SS3H9-M3/57TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 90V DO-214AB |
|
BYT56G-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
|
NRVBAF3200T3GRochester Electronics |
200 V, 3.0 A SCHOTTKY RECTIFIER |
|
SD125SC150B.TSMC Diode Solutions |
DIODE SCHOTTKY 150V 15A DIE |
|
RB168L100DDTE25ROHM Semiconductor |
SUPER LOW IR TYPE AUTOMOTIVE SCH |
|
CMPD6001 BK PBFREECentral Semiconductor |
DIODE GEN PURP 75V 250MA SOT23 |
|
US1G-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO214AC |
|
MBR120ESFT3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20V 1A SOD123FL |
|
STTH8L06G-TRSTMicroelectronics |
DIODE GEN PURP 600V 8A D2PAK |
|
MMBD4448H-7-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 80V 250MA SOT23-3 |
|
VS-15EWH06FNTRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |