Type | Description |
---|---|
Series: | - |
Package: | Strip |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AA |
Supplier Device Package: | DO-213AA, MINI-MELF |
Operating Temperature - Junction: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAS16,235Nexperia |
DIODE GP 100V 215MA TO236AB |
|
SS34LHR3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 3A SUB SMA |
|
NRVBS360BT3G-VF01Rochester Electronics |
DIODE SCHOTTKY 60V 4A SMB |
|
SSL12HR3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 1A DO214AC |
|
SA2K-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GPP 2A 800V DO-214AC |
|
S2D-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.5A DO214AA |
|
SMS240Diotec Semiconductor |
SCHOTTKY MELF 40V 2A |
|
VBT1080S-E3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB |
|
1N4001GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
|
1N4154Rochester Electronics |
RECTIFIER DIODE |
|
1F18Rectron USA |
DIODE GEN PURP 1800V 500MA R1 |
|
SF32G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO201AD |
|
V8PM6-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 8A 60V SMPC |