SBR DIODE TO252
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Super Barrier |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 20 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 24 ns |
Current - Reverse Leakage @ Vr: | 50 µA @ 150 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JAN1N5620Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A AXIAL |
|
V3FM12HM3/HVishay General Semiconductor – Diodes Division |
3A,120V,SMF,TRENCH SKY RECT. |
|
VT760-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 7.5A 60V TO-220AC |
|
FR101GTASMC Diode Solutions |
DIODE GPP 50V 1A DO41 |
|
MBRS360T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 3A SMC |
|
ES3F R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 3A DO214AB |
|
STPS30100STSTMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220AB |
|
BAV19WS-G RRGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 200MA SOD323 |
|
SS1P3-M3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 1A 30V DO-220AA |
|
VF20120S-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 120V ITO220AB |
|
SE20DB-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3.9A TO263AC |
|
SS34B-HFComchip Technology |
DIODE SCHOTTKY 3A 40V SMB |
|
FSV1550VSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 50V 15A TO277-3 |