CAP TANT 68UF 10% 10V 2312
DIODE FR DO-213AA 600V 1A
SMA-SJB/FKRAZ-RJ G316 36I
HIGH PERF SNGL STAGE IEC INLET F
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 250 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AA |
Supplier Device Package: | DO-213AA, MINI-MELF |
Operating Temperature - Junction: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PDS3100Q-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 3A POWERDI5 |
|
MUR315S R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 3A DO214AB |
|
NSVR05F40NXT5GRochester Electronics |
SCHOTTKY BARRIER DIODE, 500 MA, |
|
AU2PDHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A |
|
RS1JL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
PMLL4448,115Nexperia |
DIODE GEN PURP 75V 200MA LLDS |
|
P2000DTLDiotec Semiconductor |
DIODE STD D8X7.5 200V 20A |
|
VS-40HFL60S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
|
1N4148WS-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 75V 150MA SOD323 |
|
US2D-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 2A DO214AA |
|
BAV116WSQ-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 85V 215MA SOD323 |
|
SK14B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A DO214AA |
|
NTE6040NTE Electronics, Inc. |
R-600 PRV 60A CATH CASE |