DIODE SCHOTTKY 100V 8A TO277A
Type | Description |
---|---|
Series: | eSMP®, TMBS® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 680 mV @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 70 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N5401-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
|
SBR1A20T5-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR SOD523 |
|
1N5622USRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1A D5A |
|
UG2D-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO204AC |
|
RS2G-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1.5A DO214AA |
|
VS-50WQ10FNHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 5.5A DPAK |
|
UFR3020Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 30A DO4 |
|
S5D V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 5A DO214AB |
|
BYT56G-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
|
HERF1007GAHC0GTSC (Taiwan Semiconductor) |
DIODE, HIGH EFFICIENT |
|
FESF8ATHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 8A ITO220AC |
|
VS-3ECH02-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A SMC |
|
SS315A-F1-0000HF |
DIODE SCHOTTKY 150V 3A DO214AC |