CAP CER 18PF 50V C0G/NP0 1210
DIODE GEN PURP 200V 500MA DO213
Type | Description |
---|---|
Series: | SUPERECTIFIER® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 500 mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | 4pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AA (Glass) |
Supplier Device Package: | DO-213AA (GL34) |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DZ950N36KHPSA1IR (Infineon Technologies) |
DIODE GEN PURP 3.6KV 950A MODULE |
|
JAN1N6623USRoving Networks / Microchip Technology |
DIODE GEN PURP 880V 1A D5A |
|
1N4936G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
MUR140Rochester Electronics |
DIODE GEN PURP 400V 1A AXIAL |
|
RBR5LAM30BTFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
BYC15-600P127Rochester Electronics |
HYPERFAST RECTIFIER DIODE TO 22 |
|
VS-EPH3006HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
|
JAN1N6624USRoving Networks / Microchip Technology |
DIODE GEN PURP 990V 1A D5A |
|
RS1DL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 800MA SUBSMA |
|
1N4152Rochester Electronics |
RECTIFIER DIODE |
|
W2865HA680Wickmann / Littelfuse |
RECTIFIER DIODE 2862A 6800V |
|
1N1188ASolid State Inc. |
NPN SIL TRANS TO3 |
|
BA157-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |