DIODE GEN PURP 80V 100MA UMD2
SUPER I/O WITH TEMP SENSOR
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80 V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 100 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 4 ns |
Current - Reverse Leakage @ Vr: | 100 nA @ 80 V |
Capacitance @ Vr, F: | 3pF @ 0.5V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | UMD2 |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HS3J R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO214AB |
|
FR303GTASMC Diode Solutions |
DIODE GPP 200V 3A DO201AD |
|
MUR480ERLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 4A AXIAL |
|
VS-25ETS10STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
|
PMEG6020ETP/B115Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
1N5406-GComchip Technology |
DIODE GEN PURP 600V 3A DO201AD |
|
BAT18-05E6327Rochester Electronics |
PIN DIODE, 35V V(BR) |
|
BAS85-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD80 |
|
RSFGL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 500MA SUBSMA |
|
SE10PG-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO220AA |
|
PDS3100-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 3A POWERDI5 |
|
ESH2PD-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO220AA |
|
VS-2EJH02HM3/6AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO221AC |