DIODE GEN PURP 600V 8A TO220AC
Type | Description |
---|---|
Series: | SWITCHMODE™ |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.5 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 60 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FR104G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
SS23L RUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 2A SUB SMA |
|
PMEG030V050EPDZNexperia |
DIODE SCHOTTKY 30V 5A CFP15 |
|
HSM835J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35V 8A DO214AB |
|
BYM10-400/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
NSR10F30QNXT5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 1A 2DSN |
|
FFSH4065ASanyo Semiconductor/ON Semiconductor |
650V 40A SIC SBD |
|
VS-8ETX06STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
RS3KHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
|
SS5P3-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 5A TO277A |
|
SR204-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 2A DO41 |
|
1N5402T-GComchip Technology |
DIODE GEN PURP 200V 3A DO201AD |
|
MBRM2H100T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 2A POWERMITE |