DIODE GEN PURP 600V 2A DO214AA
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
V8P15HM3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 8A TO277A |
|
V15P15-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 15A TO277A |
|
1SS321,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL SCHOTTKY BARRIER DI |
|
UPR15/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 2.5A DO216 |
|
BY203-20STAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1.2KV 250MA SOD57 |
|
HS3KB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AA |
|
STPSC10H065BY-TRSTMicroelectronics |
AUTOMOTIVE 650 V POWER SCHOTTKY |
|
BYP35A05Diotec Semiconductor |
DIODE STD D13X10.7W 50V 35A |
|
S2GHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO214AA |
|
1N4151W-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 150MA SOD123 |
|
VS-E5PX6012L-N3Vishay General Semiconductor – Diodes Division |
DIODE FREDS 1200V 60A TO-247 |
|
SI-A1125Diotec Semiconductor |
HV DIODE D55X23 3200V 6A |
|
VSS8D5M15HM3/IVishay General Semiconductor – Diodes Division |
5A, 150V, SLIMSMAW TRENCH SKY RE |