DIODE GEN PURP 100V 6A R6
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 6 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | 100pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R6, Axial |
Supplier Device Package: | R-6 |
Operating Temperature - Junction: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UF1JHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
STTH15RQ06G2Y-TRSTMicroelectronics |
AUTOMOTIVE-GRADE ULTRAFAST DIODE |
|
BYG22B-E3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 100V 2A DO214AC |
|
VS-12FR10Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
|
STPS1L40USTMicroelectronics |
DIODE SCHOTTKY 40V 1A SMB |
|
VS-1N1184RAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
|
RS07D-GS08Vishay General Semiconductor – Diodes Division |
DIODE GP 200V 500MA DO219AB |
|
SR210 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 2A DO204AC |
|
MUR3060P-B1-0000HF |
DIODE GEN PURP 600V 30A TO247AC |
|
GS1GE-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 400V 1A DO214AC |
|
SK58L-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 80V 5A DO214AB |
|
BY500-1000Diotec Semiconductor |
DIODE FR D5.4X7.5 1000V 5A |
|
US1DWFQ-7Zetex Semiconductors (Diodes Inc.) |
ULTRAFAST RECOVERY RECTIFIER SOD |