DIODE GEN PURP 600V 2A AXIAL
Type | Description |
---|---|
Series: | SWITCHMODE™ |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.35 V @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SB2J-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
|
S5M V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 5A DO214AB |
|
SM5062-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
M1MA152AT1GRochester Electronics |
RECTIFIER DIODE |
|
1N5554USRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 3A B-MELF |
|
SBR1045D1-13Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 45V 10A DPAK |
|
31GF4-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
|
1SS123(0)-T1B-ARochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
E3D08065GWolfspeed - a Cree company |
650V AUTOMOTIVE SIC DIODE |
|
BAT54W-E3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD123 |
|
RB521VM-30TE-17ROHM Semiconductor |
RB521VM-30 IS SUPER LOW VF |
|
VS-ETU1506STRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263 |
|
HS1MFLTSC (Taiwan Semiconductor) |
75NS 1A 1000V HIGH EFFICIENT REC |