IEC ALARM 4-6VDC 90DB OXYGEN STK
DIODE GP 1000V 150A DO-8
SFERNICE THIN FILMS
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 150A |
Voltage - Forward (Vf) (Max) @ If: | 1.47 V @ 600 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-205AA, DO-8, Stud |
Supplier Device Package: | DO-205AA (DO-8) |
Operating Temperature - Junction: | -40°C ~ 180°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SF47GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 4A DO201AD |
|
GP10YE-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 1A DO204AL |
|
RS3A V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
|
HS3M V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO214AB |
|
B1100-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 1A SMA |
|
VS-HFA08SD60STR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
|
ES2DA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AC |
|
RS1JB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A SMB |
|
BYW82-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
|
STD10150TRSMC Diode Solutions |
DIODE SCHOTTKY 150V DPAK |
|
S8MC-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 8A SMC |
|
BYX85TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 2A SOD57 |
|
SS115LW RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SOD123W |