DIODE FAST 100V 3A DO-201
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 150 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | 65pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HS1AFLTSC (Taiwan Semiconductor) |
50NS 1A 50V HIGH EFFICIENT RECOV |
|
SSL12HM2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 1A DO214AC |
|
S1JLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SOD123W |
|
GP15A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1.5A DO204AC |
|
BYT54D-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.25A SOD57 |
|
FFSH3065B-F085Sanyo Semiconductor/ON Semiconductor |
650V 30A SIC SBD GEN1.5 |
|
CDLL4150Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA DO213AA |
|
MBR0530T3GRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 0.5A, |
|
CDBER0130LComchip Technology |
DIODE SCHOTTKY 30V 100MA 0503 |
|
VS-SD300C28CVishay General Semiconductor – Diodes Division |
DIODE GP 2.8KV 540A DO200AA |
|
BAT54-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |
|
M1MA151KT1Rochester Electronics |
DIODE GEN PURP 40V 100MA SC59 |
|
BAQ34-GS18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 60V 200MA SOD80 |