







MEMS OSC XO 4.0960MHZ H/LV-CMOS
DIODE STD D8X7.5 800V 20A
CONN PLUG FMALE 9POS GOLD CRIMP
.050 SOCKET DISCRETE CABLE ASSEM
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 800 V |
| Current - Average Rectified (Io): | 20A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 20 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 1.5 µs |
| Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Through Hole |
| Package / Case: | P600, Axial |
| Supplier Device Package: | P600 |
| Operating Temperature - Junction: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
D950N18TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 1.8KV 950A |
|
|
V8PA12-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 8A DO221BC |
|
|
SJPL-D2VLSanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A SJP |
|
|
ES1K-F1-0000HF |
DIODE GEN PURP 800V 1A DO214AC |
|
|
BAS321/8FNexperia |
DIODE GEN PURP 200V 250MA SOD323 |
|
|
BAS321,135Nexperia |
DIODE GEN PURP 200V 250MA SOD323 |
|
|
1N5401-GComchip Technology |
DIODE GEN PURP 100V 3A DO201AD |
|
|
1N5408-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
|
|
CDBC3150LR-HFComchip Technology |
DIODE SCHOTTKY 150V 3A DO214AB |
|
|
MUR860HC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A TO220AC |
|
|
NXPSC04650QWeEn Semiconductors Co., Ltd |
DIODE SCHOTTKY 650V 4A TO220AC |
|
|
VS-ETU1506STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
|
SB540E-GComchip Technology |
DIODE SCHOTTKY 40V 5A DO201AD |