BRIDGE RECT 200V 2A RS-1M
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Single Phase |
Technology: | Standard |
Voltage - Peak Reverse (Max): | 200 V |
Current - Average Rectified (Io): | 2 A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 2 A |
Current - Reverse Leakage @ Vr: | 2 µA @ 200 V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 4-SIP, RS-1M |
Supplier Device Package: | RS-1M |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RBU401MRectron USA |
BRIDGE RECT GLASS 50V 4A RBU |
|
DF1506S-E3/77Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 1.5A DFS |
|
RS2005MRectron USA |
BRIDGE RECT GLASS 600V 20A RS20M |
|
ABF6UTRSMC Diode Solutions |
BRIDGE RECT 1PHASE 600V 1A ABF |
|
MDA202GRectron USA |
BRIDGE RECT GLASS 200V 2A RS-1 |
|
GBU15A-BPMicro Commercial Components (MCC) |
BRIDGE RECT 1PHASE 50V 15A GBU |
|
DF02ST-GComchip Technology |
BRIDGE RECT 1PHASE 200V 1A DFS |
|
B125C800DM-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 200V 900MA DFM |
|
PB3510-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 1KV 35A PB |
|
BU1210-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 1KV 3.4A BU |
|
B4M-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 400V 500MA MBM |
|
HDBL103G C1GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 200V 1A DBL |
|
VS-2KBB20RVishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 200V 1.9A 2KBB |