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NXPSC12650B6J

NXPSC12650B6J

SILICON CARBIDE POWER DIODE

NXPSC12650B6J

NXPSC12650B6J

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Part No :

NXPSC12650B6J

Manufacturer
WeEn Semiconductors Co., Ltd
Description
SILICON CARBIDE POWER DIODE
Catalog
Diodes - Rectifiers - Single
Availability
16400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
Type Description
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):12A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:380pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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