DIODE SCHOTTKY 40V 300A 3 TOWER
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40 V |
Current - Average Rectified (Io) (per Diode): | 300A |
Voltage - Forward (Vf) (Max) @ If: | 600 mV @ 300 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 mA @ 40 V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Three Tower |
Supplier Device Package: | Three Tower |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-MBR2535CTPBFVishay General Semiconductor – Diodes Division |
DIODE ARRAY SCHOTTKY 35V TO220AB |
|
BAS40-05-7Zetex Semiconductors (Diodes Inc.) |
DIODE ARRAY SCHOTTKY 40V SOT23-3 |
|
BAS 125-06W E6327IR (Infineon Technologies) |
DIODE ARRAY SCHOTTKY 25V SOT323 |
|
12CWQ03FNVishay General Semiconductor – Diodes Division |
DIODE ARRAY SCHOTTKY 30V 6A DPAK |
|
MBR1090CTHC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 10A TO220AB |
|
MBRF400100RGeneSiC Semiconductor |
DIODE SCHOTTKY 100V 200A TO244AB |
|
MA3S132E0LPanasonic |
DIODE ARRAY GP 80V 100MA SSMINI3 |
|
NTSB40200CTT4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 200V 40A D2PAK |
|
FEP16ATHE3/45Vishay General Semiconductor – Diodes Division |
DIODE ARRAY GP 50V 16A TO220AB |
|
VS-UFB200FA40PVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 202A SOT227 |
|
MA6X12400LPanasonic |
DIODE ARRAY GP 80V 100MA MINI6 |
|
MBRF1535CT C0GTSC (Taiwan Semiconductor) |
DIODE ARRAY SCHOTT 35V ITO220AB |
|
MBR1035CTHC0GTSC (Taiwan Semiconductor) |
DIODE ARRAY SCHOTTKY 35V TO220AB |