DIODE SCHOTTKY 600V 7A TO220-2
Type | Description |
---|---|
Series: | Zero Recovery™ |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 7A |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 4 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 200 µA @ 600 V |
Capacitance @ Vr, F: | 220pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
UH1B-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
![]() |
GS1B-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 1A DO214AC |
![]() |
ES1PAHE3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO220AA |
![]() |
ES1AL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A SUB SMA |
![]() |
VS-100BGQ045Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 100A POWIRTAB |
![]() |
MR756RLGSanyo Semiconductor/ON Semiconductor |
DIODE GP 600V 6A MICRODE BUTTON |
![]() |
SRA820HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 8A TO220AC |
![]() |
VS-80APF02PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 80A TO247AC |
![]() |
D452N18EVFXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 1.8KV 450A FL54 |
![]() |
S3AHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |
![]() |
1N458A_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 150V 500MA DO35 |
![]() |
1N5627GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
![]() |
HER205G-APMicro Commercial Components (MCC) |
DIODE GPP HE 2A DO-15 |