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GPA015A120MN-ND

GPA015A120MN-ND

IGBT 1200V 30A 212W TO3PN

GPA015A120MN-ND

GPA015A120MN-ND

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Part No :

GPA015A120MN-ND

Manufacturer
SemiQ
Description
IGBT 1200V 30A 212W TO3PN
Catalog
Transistors - IGBTs - Single
Availability
998699 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
GPA015A120MN-ND PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:NPT and Trench
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):45 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 15A
Power - Max:212 W
Switching Energy:1.61mJ (on), 530µJ (off)
Input Type:Standard
Gate Charge:210 nC
Td (on/off) @ 25°C:25ns/166ns
Test Condition:600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr):320 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3PN
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