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GPA030A135MN-FDR

GPA030A135MN-FDR

IGBT 1350V 60A 329W TO3PN

GPA030A135MN-FDR

GPA030A135MN-FDR

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Part No :

GPA030A135MN-FDR

Manufacturer
SemiQ
Description
IGBT 1350V 60A 329W TO3PN
Catalog
Transistors - IGBTs - Single
Availability
668666 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
GPA030A135MN-FDR PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1350 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):90 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 30A
Power - Max:329 W
Switching Energy:4.4mJ (on), 1.18mJ (off)
Input Type:Standard
Gate Charge:300 nC
Td (on/off) @ 25°C:30ns/145ns
Test Condition:600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr):450 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3
Supplier Device Package:TO-3PN
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