GANFET N-CH 40V 33A DIE OUTLINE
Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 4mOhm @ 33A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 9mA |
Gate Charge (Qg) (Max) @ Vgs: | 11.6 nC @ 5 V |
Vgs (Max): | +6V, -5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die Outline (11-Solder Bar) |
Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IPB25N06S3-25IR (Infineon Technologies) |
MOSFET N-CH 55V 25A TO263-3 |
![]() |
NTGS3455T1Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.5A 6TSOP |
![]() |
MGSF1N02LT1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 750MA SOT23-3 |
![]() |
IPD105N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 35A TO252-3 |
![]() |
SI1013X-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 350MA SC89-3 |
![]() |
IRL3303STRRIR (Infineon Technologies) |
MOSFET N-CH 30V 38A D2PAK |
![]() |
BUK755R4-100E,127Nexperia |
MOSFET N-CH 100V 120A TO220AB |
![]() |
BSP324 E6327IR (Infineon Technologies) |
MOSFET N-CH 400V 170MA SOT223-4 |
![]() |
SI7446BDP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8 |
![]() |
IRFB7437GPBFIR (Infineon Technologies) |
MOSFET N CH 40V 195A TO220AB |
![]() |
SUD50N02-04P-E3Vishay / Siliconix |
MOSFET N-CH 20V 50A TO252 |
![]() |
AUIRF7805QTRIR (Infineon Technologies) |
MOSFET N CH 30V 13A 8-SO |
![]() |
SI7457DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 100V 28A PPAK SO-8 |