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TC58BYG2S0HBAI6

TC58BYG2S0HBAI6

IC FLASH 4GBIT PARALLEL 67VFBGA

TC58BYG2S0HBAI6

TC58BYG2S0HBAI6

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Part No :

TC58BYG2S0HBAI6

Manufacturer
Toshiba Memory America, Inc. (Kioxia America, Inc.)
Description
IC FLASH 4GBIT PARALLEL 67VFBGA
Catalog
Memory
Availability
10338 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
TC58BYG2S0HBAI6 PDF
Type Description
Series:Benand™
Package:Tray
Part Status:Active
Memory Type:Non-Volatile
Memory Format:FLASH
Technology:FLASH - NAND (SLC)
Memory Size:4Gb (512M x 8)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:25ns
Access Time:25 ns
Voltage - Supply:1.7V ~ 1.95V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:67-VFBGA
Supplier Device Package:67-VFBGA (6.5x8)
TC58BYG2S0HBAI6 is available at GangBo-ic.com, Please review product page below for detailed information, including TC58BYG2S0HBAI6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TC58BYG2S0HBAI6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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