IC FLASH 4G PARALLEL 63TFBGA
Type | Description |
---|---|
Series: | Benand™ |
Package: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (SLC) |
Memory Size: | 4G (512M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25 ns |
Voltage - Supply: | 1.7V ~ 1.95V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-VFBGA |
Supplier Device Package: | 63-TFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
M28W320ECB70ZB6T TRMicron Technology |
IC FLASH 32MBIT PARALLEL 47TFBGA |
|
IS45S16800F-7CTLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT25QU01GBBB8E12-0SIT TRMicron Technology |
IC FLSH 1GBIT SPI 166MHZ 24TPBGA |
|
25LC160C-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
S25HS512TFABHI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
S29GL01GS10TFA023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
8102403VARochester Electronics |
4096 X 1 CMOS RAM |
|
CY7C1425KV18-250BZIRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS43R16320E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY7C1414SV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
23K640-E/PRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8DIP |
|
DS1230Y-85+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
93LC46A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |