IC DRAM 288MBIT PAR 144TWBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 288Mb (32M x 9) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 20 ns |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 144-TBGA |
Supplier Device Package: | 144-TWBGA (11x18.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S29JL032J70TFI023Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
24LC08B-E/MCRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8DFN |
|
IS43DR16160B-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
IS61DDPB451236A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165LFBGA |
|
S29GL512S10DHA020Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
CY7C1339S-133AXCRochester Electronics |
IC SRAM 4MBIT 133MHZ 100LQFP |
|
AT24CM01-SHD-BRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
CY14B101KA-ZS45XITCypress Semiconductor |
IC NVSRAM 1MBIT PAR 44TSOP II |
|
MAX721ESERochester Electronics |
FLASH MEMORY POWER-SUPPLY REG |
|
24LC00T-I/MCRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8DFN |
|
71V65703S80BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IS61NLF25636B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
IS43QR16256B-083RBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96BGA |