IC DRAM 512MBIT PARALLEL 54TFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 166 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 5.5 ns |
Voltage - Supply: | 1.7V ~ 1.95V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TFBGA |
Supplier Device Package: | 54-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS61VF204836B-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
CY7C1312CV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
GD25Q64CSJGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
M24512-RDW6TPSTMicroelectronics |
IC EEPROM 512KBIT I2C 8TSSOP |
|
25LC080BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
IS66WVH8M8ALL-166B1LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 24TFBGA |
|
7027L15PFGRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
M29F800FB5AN6E2Alliance Memory, Inc. |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
CY7C1512KV18-250BZXCRochester Electronics |
QDR SRAM, 4MX18, 0.45NS PBGA165 |
|
MT53D512M16D1DS-046 AAT:DMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
IS62WV12816BLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
MT53D512M32D2DS-046 IT:DMicron Technology |
IC DRAM 16GBIT 2.133GHZ 200WFBGA |
|
AT34C02C-TH-TRochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |