IC DRAM 512MBIT PAR 86TSOP II
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 512Mb (16M x 32) |
Memory Interface: | Parallel |
Clock Frequency: | 133 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 6 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 86-TFSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S-93A46BD0A-J8T2U3ABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8SOPJ |
|
24LC256T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8MSOP |
|
W25Q16JWSNIQ TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
S-93L56AD0I-I8T1UABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 2MHZ SNT8A |
|
70V658S10BC8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
CY62137CV30LL-55BAIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
CY7C1386C-167AIRochester Electronics |
CACHE SRAM, 512KX36, 3.4NS |
|
S25FS512SDSNFI013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
CY7C2270XV18-633BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BR24S16FVM-WTRROHM Semiconductor |
IC EEPROM 16KBIT I2C 8MSOP |
|
UPD44164185BF5-E33Y-EQ3-ARochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
CY7C1061GE-10ZXICypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
CAT28LV64W-20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28SOIC |