MOSFET 2N-CH 10.6V 8DIP
Type | Description |
---|---|
Series: | EPAD®, Zero Threshold™ |
Package: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | - |
Rds On (Max) @ Id, Vgs: | 500Ohm @ 4V |
Vgs(th) (Max) @ Id: | 20mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
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Phone: 00852-52612101
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