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TPD3215M

TPD3215M

GANFET 2N-CH 600V 70A MODULE

TPD3215M

TPD3215M

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Part No :

TPD3215M

Manufacturer
Transphorm
Description
GANFET 2N-CH 600V 70A MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
760576 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
TPD3215M PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Rds On (Max) @ Id, Vgs:34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:2260pF @ 100V
Power - Max:470W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:Module
Supplier Device Package:Module
TPD3215M is available at GangBo-ic.com, Please review product page below for detailed information, including TPD3215M price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TPD3215M to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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