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EPC2100

EPC2100

GAN TRANS ASYMMETRICAL HALF BRID

EPC2100

EPC2100

Image is for reference, please contact us to get the real picture

Part No :

EPC2100

Manufacturer
EPC
Description
GAN TRANS ASYMMETRICAL HALF BRID
Catalog
Transistors - FETs, MOSFETs - Arrays
Availability
10500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
EPC2100 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs:8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
EPC2100 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2100 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2100 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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