MOSFET 4N-CH 10.6V 16SOIC
Type | Description |
---|---|
Series: | EPAD® |
Package: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 12mA, 3mA |
Rds On (Max) @ Id, Vgs: | 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: | 810mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF7304IR (Infineon Technologies) |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
|
STL15DN4F5STMicroelectronics |
MOSFET 2N-CH 40V 60A POWERFLAT |
|
NTJD4401NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 630MA SOT363 |
|
MSCSM70TAM10CTPAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6P |
|
SIZF906ADT-T1-GE3Vishay / Siliconix |
MOSFET DUAL N-CHAN 30V |
|
IRL6372TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 8.1A 8SOIC |
|
SI7923DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 30V 4.3A 1212-8 |
|
FDMS9600SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/16A POWER56 |
|
NVMFD5C470NT1GSanyo Semiconductor/ON Semiconductor |
40V 11.7 MOHM T8 S08FL DU |
|
DMN2004DWKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 20V 540MA SOT363 |
|
SSM6N36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
|
SQJ260EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
SLA5065 LF830Sanken Electric Co., Ltd. |
MOSFET 4N-CH 60V 7A 15-SIP |